dated : 01/09/2006 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) MA721WS silicon epitaxial s chottky barrier diode applications ? super-high speed switching circuit ? small current rectification absolute maximum ratings (t a = 25 o c) parameter symbol value unit reverse voltage v r 30 v peak forward current i fm 300 ma average forward current i f(av) 200 ma non-repetitive peak forward surge current 1) i fsm 1 a junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c 1) the peak-to-peak value in one cycle of 50 hz sine-wave (non-repetitive) characteristics at t a = 25 o c parameter symbol typ. max. unit forward voltage at i f = 200 ma v f - 0.55 v reverse current at v r = 30 v i r - 50 a terminal capacitance at f = 1 mhz c t 30 - pf reverse recovery time at i f = i r = 100 ma, i rr = 10 ma, r l = 100 ? t rr 3 - ns anode 2 top view marking code: " do " simplified outline sod-323 and symbol 1 do 2 pinning 1 pin cathode description
dated : 01/09/2006 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) MA721WS
dated : 01/09/2006 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) MA721WS package outline plastic surface mounted package; 2 leads sod-323 a mm unit b d ce h e b a d a c h e p 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 e p
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